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Vedi Specifiche Tecniche

IS61LV25616AL-10T +BOM

SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v

Produttore:

ISSI, Integrated Silicon Solution Inc
ProduttorePart #:

IS61LV25616AL-10T
Scheda dati:

IS61LV25616AL-10T Scheda dati (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Pin Count:

44
Reach Compliance Code:

compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IS61LV25616AL-10T

IS61LV25616AL-10T Descrizione generale

Ideal for high-speed, energy-efficient applications, the IS61LV25616AL-10T is a 256Kx16 CMOS static RAM chip featuring a fast 10ns access time and a power-saving standby mode. Operating at a supply voltage of 3.3V, this chip offers a balance of performance and efficiency, making it suitable for a diverse array of systems and devices. Whether utilized in networking equipment, automotive electronics, or medical devices, the IS61LV25616AL-10T ensures dependable memory access and contributes to the overall responsiveness of the end product

Caratteristiche principali

High-speed access time:
— 10, 12 ns
CMOS low power operation
Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available

Specifiche

Pbfree Code	No	Part Life Cycle Code	Obsolete
Pin Count	44	Reach Compliance Code	compliant
ECCN Code	3A991.B.2.A	HTS Code	8542.32.00.41
Access Time-Max	10 ns	I/O Type	COMMON
JESD-30 Code	R-PDSO-G44	JESD-609 Code	e0
Length	18.415 mm	Memory Density	4194304 bit
Memory IC Type	STANDARD SRAM	Memory Width	16
Moisture Sensitivity Level	3	Number of Functions	1
Number of Terminals	44	Number of Words	262144 words
Number of Words Code	256000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	70 °C	Operating Temperature-Min
Organization	256KX16	Output Characteristics	3-STATE
Parallel/Serial	PARALLEL	Qualification Status	Not Qualified
Seated Height-Max	1.2 mm	Standby Current-Max	0.01 A
Standby Voltage-Min	2 V	Supply Current-Max	0.1 mA
Supply Voltage-Max (Vsup)	3.63 V	Supply Voltage-Min (Vsup)	3.135 V
Supply Voltage-Nom (Vsup)	3.3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	COMMERCIAL
Terminal Finish	TIN LEAD	Terminal Form	GULL WING
Terminal Pitch	0.8 mm	Terminal Position	DUAL
Width	10.16 mm	Product Category	SRAM
Memory Size	4 Mbit	Access Time	10 ns
Interface Type	Parallel	Supply Voltage - Max	3.6 V
Supply Voltage - Min	3.135 V	Supply Current - Max	100 mA
Minimum Operating Temperature	0 C	Maximum Operating Temperature	+ 70 C
Mounting Style	SMD/SMT	Data Rate	SDR
Moisture Sensitive	Yes	Number of Ports	1
Product Type	SRAM	Factory Pack Quantity	135
Subcategory	Memory & Data Storage	Type	Asynchronous

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