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High voltage switching transistor chip
TO-220Produttore:
ProduttorePart #:
IRG4BC20UD
Scheda dati:
Place:
Mexico
Launch_date:
Jul 11, 2000
Last_inspection_date:
+90
Supplier_cage_code:
C6489
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
The IRG4BC20UD is an Insulated Gate Bipolar Transistor (IGBT) that stands out for its high power switching capabilities. With a collector-emitter voltage rating of 600V and a continuous collector current rating of 20A, this IGBT is a go-to choice for applications such as motor control, power supply, and renewable energy systems. Its compact TO-220AB package makes it easy to mount and heatsink, while its low on-state voltage drop and high switching speed ensure efficiency and speed in operation. Moreover, its wide operating temperature range of -55°C to 150°C and built-in protection features like overcurrent and overvoltage protection make it suitable for demanding industrial environments
place | Mexico | launch_date | Jul 11, 2000 |
last_inspection_date | +90 | supplier_cage_code | C6489 |
htsusa | schedule_b | 8541290080 | |
ppap | False | aec | |
Series | - | IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 13 A |
Current - Collector Pulsed (Icm) | 52 A | Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 6.5A |
Power - Max | 60 W | Switching Energy | 160µJ (on), 130µJ (off) |
Input Type | Standard | Gate Charge | 27 nC |
Td (on/off) @ 25°C | 39ns/93ns | Test Condition | 480V, 6.5A, 50Ohm, 15V |
Reverse Recovery Time (trr) | 37 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
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