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Schottky Diodes & Rectifiers Band Ku Anti Parallel
BGAProduttore:
ProduttorePart #:
DMJ2246-000
Scheda dati:
Technology:
Si
Packaging:
Tray
Factory Pack Quantity:
100
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches. Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types.
Product Category: | Schottky Diodes & Rectifiers | Technology: | Si |
Packaging: | Tray | Product Type: | Schottky Diodes & Rectifiers |
Factory Pack Quantity: | 100 | Subcategory: | Diodes & Rectifiers |
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Prodotto 365 giorni
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