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CY7C131-25NXC +BOM

1Kx8 Dual Port SRAM COM 5V SRAM

Produttore:

INFINEON
ProduttorePart #:

CY7C131-25NXC
Scheda dati:

CY7C131-25NXC Scheda dati (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM
Technology:

SRAM - Dual Port, Asynchronous
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per CY7C131-25NXC

CY7C131-25NXC Descrizione generale

The CY7C131-25NXC, a high-speed asynchronous SRAM memory chip manufactured by Cypress Semiconductor, offers impressive performance with its 128Kb (16K x 8) density and 25ns operating speed. This makes it an excellent choice for applications that demand rapid access times, such as telecommunications equipment, medical devices, and test and measurement instruments. The chip's low standby current of 5mA contributes to energy efficiency, an essential consideration in modern electronic designs. Its wide voltage range of 4.5V to 5.5V and 28-pin PDIP package provide flexibility and ease of integration, while the chip's standby mode further enhances its energy-saving capabilities when not in active use. With a maximum operating temperature of 85 degrees Celsius, the CY7C131-25NXC is designed to withstand harsh operating conditions, adding to its reliability. Additionally, the chip's 10ns chip enable access time and 10ns output enable access time highlight its efficiency in data retrieval, ensuring high performance in demanding applications

Caratteristiche principali

True dual-ported memory cells, which allow simultaneous reads of the same memory location

1 K8 organization

0.65 micron CMOS for optimum speed and power

High speed access: 15 ns

Low operating power: ICC = 110 mA (maximum)

Fully asynchronous operation

Automatic power-down

Master CY7C130/130A/CY7C131/131A easily expands data bus width to 16 or more bits using slave CY7C140/CY7C141

BUSY output flag on CY7C130/130A/CY7C131/131A; BUSY input on CY7C140/CY7C141

INT flag for port-to-port communication

Available in 48-pin DIP (CY7C130/130A/140), 52-pin PLCC, 52-pin TQFP

Pb-free packages available

Specifiche

Programmabe	Not Verified	Memory Type	Volatile
Memory Format	SRAM	Technology	SRAM - Dual Port, Asynchronous
Memory Size	8Kbit	Memory Organization	1K x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	25ns	Access Time	25 ns
Voltage - Supply	4.5V ~ 5.5V	Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount

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