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CY7C028V-20AI +BOM

CY7C028V-20AI is a 3.3V 64Kx16 asynchronous dual port SRAM

CY7C028V-20AI Descrizione generale

With its impressive 256Kx9-bit capacity and fast operating speed of 20ns, the CY7C028V-20AI is a standout choice for those seeking a high-performance synchronous SRAM chip. Designed for versatility, this chip is suitable for a variety of applications, including telecommunications, networking, and industrial control systems. Its low power consumption and wide voltage range of 3V to 3.6V further enhance its appeal, ensuring efficient energy use and compatibility with a range of systems. Whether you're working on a telecommunications infrastructure or an industrial automation solution, the CY7C028V-20AI is well-equipped to meet your needs with its impressive performance and reliability

Caratteristiche principali

  • True Dual-Ported memory cells which allow simultaneous access of the same memory location
  • 32K x 16 organization (CY7C027V/027VN/027AV [1])
  • 64K x 16 organization (CY7C028V)
  • 32K x 18 organization (CY7C037V/037AV[2])
  • 64K x 18 organization (CY7C038V)
  • 0.35 micron CMOS for optimum speed and power
  • High speed access: 15, 20, and 25 ns
  • Low operating power
  • Active: ICC = 115 mA (typical)
  • Standby: ISB3 = 10 μA (typical)
  • Fully asynchronous operation
  • Automatic power down
  • Expandable data bus to 32/36 bits or more using Master/Slave chip select when using more than one device
  • On-chip arbitration logic
  • Semaphores included to permit software handshaking between ports
  • INT flag for port-to-port communication
  • Separate upper-byte and lower-byte control
  • Dual chip enables
  • Pin select for Master or Slave
  • Commercial and Industrial temperature ranges
  • 100-pin Pb-free TQFP and 100-pin TQFP

Specifiche

Pbfree Code No Part Life Cycle Code Obsolete
Pin Count 100 Reach Compliance Code compliant
ECCN Code 3A991.B.2.B HTS Code 8542.32.00.41
Access Time-Max 20 ns Additional Feature AUTOMATIC POWER-DOWN
I/O Type COMMON JESD-30 Code S-PQFP-G100
JESD-609 Code e0 Length 14 mm
Memory Density 1048576 bit Memory IC Type MULTI-PORT SRAM
Memory Width 16 Moisture Sensitivity Level 3
Number of Functions 1 Number of Ports 2
Number of Terminals 100 Number of Words 65536 words
Number of Words Code 64000 Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 64KX16 Output Characteristics 3-STATE
Parallel/Serial PARALLEL Qualification Status Not Qualified
Seated Height-Max 1.6 mm Standby Current-Max 0.00005 A
Standby Voltage-Min 2 V Supply Current-Max 0.195 mA
Supply Voltage-Max (Vsup) 3.6 V Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V Surface Mount YES
Technology CMOS Temperature Grade INDUSTRIAL
Terminal Finish TIN LEAD Terminal Form GULL WING
Terminal Pitch 0.5 mm Terminal Position QUAD
Width 14 mm

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