Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

CY62256NLL-55SNXIT +BOM

Efficient 256Kb SRAM module

Produttore:

Alliance Memory, Inc.
ProduttorePart #:

CY62256NLL-55SNXIT
Scheda dati:

CY62256NLL-55SNXIT Scheda dati (PDF)
Series:

MoBL®
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM

CY62256NLL-55SNXIT Descrizione generale

Cypress Semiconductor's CY62256NLL-55SNXIT is a top-notch static RAM chip that delivers exceptional performance and reliability for high-performance systems. With a 32K x 8-bit configuration and a high-speed access time of 55 ns, it provides fast and efficient data storage capabilities. Operating at a voltage range of 4.5V to 5.5V, this SRAM chip is versatile and suitable for a wide range of applications, from industrial machinery to automotive electronics. Its low standby current of 5 µA and small form factor make it an energy-efficient and space-saving solution, perfect for battery-powered devices and other compact designs. The CY62256NLL-55SNXIT is designed to meet the demands of applications where quick access to data is crucial, offering reliable and high-speed data storage. Whether you're designing networking equipment or intricate electronic systems, this SRAM chip is sure to fulfill your performance and reliability needs

Caratteristiche principali

Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automotive-E: –40°C to 125°C
High speed: 55 ns
Voltage range: 4.5V–5.5V operation
Low active power
— 275 mW (max.)
Low standby power (LL version)
— 82.5 µW (max.)
Easy memory expansion with CE and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected
CMOS for optimum speed/power
Available in pb-free and non Pb-free 28-lead (600-mil) PDIP, 28-lead (300-mil) narrow SOIC, 28-lead TSOP-I
and 28-lead Reverse TSOP-I packages

Specifiche

Series	MoBL®	Programmabe	Not Verified
Memory Type	Volatile	Memory Format	SRAM
Technology	SRAM - Asynchronous	Memory Size	256Kbit
Memory Organization	32K x 8	Memory Interface	Parallel
Write Cycle Time - Word, Page	55ns	Access Time	55 ns
Voltage - Supply	4.5V ~ 5.5V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..