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CY62167G30-45BVXI +BOM

This SRAM chip operates at voltages of 2

Produttore:

Infineon
ProduttorePart #:

CY62167G30-45BVXI
Scheda dati:

CY62167G30-45BVXI Scheda dati (PDF)
Memory Size:

16 Mbit
Organization:

2 M x 8/1 M x 16
Access Time:

45 ns
Interface Type:

Parallel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per CY62167G30-45BVXI

CY62167G30-45BVXI Descrizione generale

The CY62167G30-45BVXI from Cypress Semiconductors is a high-performance synchronous SRAM chip designed to meet the demands of modern electronic devices. With its 1Mb capacity and 45ns speed, this chip offers fast access times, making it well-suited for applications requiring high-speed data retrieval. Its fully synchronous operation, along with CE and OE control, ensures seamless integration with other components, while its low standby current consumption makes it an excellent choice for battery-powered devices. The wide voltage range of 1.65V to 3.6V further enhances its versatility, allowing for compatibility with a variety of systems. Encased in a compact VFBGA package, this SRAM chip not only saves valuable space on the PCB but also enables high-density memory configurations, making it an ideal choice for space-constrained designs. Whether you're working on consumer electronics, industrial equipment, or automotive systems, the CY62167G30-45BVXI delivers the performance, reliability, and flexibility you need to bring your designs to life

Caratteristiche principali

Very high speed: 55 ns
Wide voltage range: 1.65V to 2.25V
Ultra low standby power
❐ Typical standby current: 1.5 μA
❐ Maximum standby current: 12 μA
Ultra low active power
❐ Typical active current: 2.2 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Offered in Pb-free 48-ball VFBGA packages

Specifiche

Product Category	SRAM	Memory Size	16 Mbit
Organization	2 M x 8/1 M x 16	Access Time	45 ns
Interface Type	Parallel	Supply Voltage - Max	3.6 V
Supply Voltage - Min	2.2 V	Supply Current - Max	36 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Mounting Style	SMD/SMT	Memory Type	SDR
Moisture Sensitive	Yes	Product Type	SRAM
Factory Pack Quantity	4800	Subcategory	Memory & Data Storage
Series	MoBL®	Programmabe	Not Verified
Memory Format	SRAM	Technology	SRAM - Asynchronous
Memory Organization	2M x 8, 1M x 16	Memory Interface	Parallel
Write Cycle Time - Word, Page	45ns	Voltage - Supply	2.2V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	CY62167

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