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CY15B102QN-50SXE +BOM

Non-volatile memory solution with automotive-grade reliability

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

CY15B102QN-50SXE
Scheda dati:

CY15B102QN-50SXE Scheda dati (PDF)
Series:

Automotive, AEC-Q100, Excelon™-Auto, F-RAM™
Memory Type:

Non-Volatile
Memory Format:

FRAM
Technology:

FRAM (Ferroelectric RAM)
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per CY15B102QN-50SXE

CY15B102QN-50SXE Descrizione generale

FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 50 MHz 8-SOIC

CY15B102QN-50SXE Pinout

Infineon Technologies Corporation inventario

Caratteristiche principali

• 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8
- Virtually unlimited endurance of 10 trillion (1013) read/write cycles
- 121-year data retention (see “Data retention and endurance” on page 27)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
• Fast serial peripheral interface (SPI)
- Up to 50 MHz frequency
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP) pin
- Software protection using Write Disable (WRDI) instruction
- Software block protection for 1/4, 1/2, or entire array
• Device ID and Serial number
- Device ID includes manufacturer ID and product ID
- Unique ID
- Serial number
• Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Stored content can survive up to 3 standard reflow soldering cycles
• Low-power consumption
- 3.7 mA (typ) active current at 40 MHz
- 2.7 µA (typ) standby current
- 1.1 µA (typ) Deep Power Down mode current
- 0.1 µA (typ) Hibernate mode current
• Low-voltage operation:
- CY15V102QN: VDD = 1.71 V to 1.89 V
- CY15B102QN: VDD = 1.8 V to 3.6 V
• Automotive operating temperature: –40°C to +125°C
• AEC-Q100 Grade 1 compliant
• 8-pin Small Outline Integrated Circuit (SOIC) package
• Restriction of hazardous substances (RoHS) compliant

Infineon Technologies Corporation Stock originale

Specifiche

Category	Integrated Circuits (ICs)MemoryMemory	Series	Automotive, AEC-Q100, Excelon™-Auto, F-RAM™
Memory Type	Non-Volatile	Memory Format	FRAM
Technology	FRAM (Ferroelectric RAM)	Memory Size	2Mbit
Memory Organization	256K x 8	Memory Interface	SPI
Clock Frequency	50 MHz	Write Cycle Time - Word, Page	-
Voltage - Supply	1.8V ~ 3.6V	Operating Temperature	-40°C ~ 125°C (TA)
Mounting Type	Surface Mount	Base Product Number	CY15B102
feature-organization	256Kx8	feature-minimum-operating-supply-voltage-v	1.8
feature-maximum-access-time-ns	9	feature-process-technology
feature-maximum-operating-supply-voltage-v	3.6	feature-maximum-operating-current-ma	8
feature-packaging	Standard	feature-rad-hard
feature-pin-count	8	feature-cecc-qualified
feature-esd-protection		feature-military	No
feature-aec-qualified	Yes	feature-aec-qualified-number	AEC-Q100
feature-auto-motive	Yes	feature-p-pap
feature-eccn-code	3A991.b.1.b.2	feature-svhc
feature-svhc-exceeds-threshold	No

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