Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

AT-41485 +BOM

RF Bipolar Transistors General purpose transistor

Produttore:

HEWLETT PACKARD CO
ProduttorePart #:

AT-41485
Scheda dati:

AT-41485 Scheda dati (PDF)
Part Life Cycle Code:

Transferred
ECCN Code:

EAR99
HTS Code:

8541.21.00.75
Additional Feature:

LOW NOISE, HIGH RELIABILITY
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per AT-41485

AT-41485 Descrizione generale

DescriptionHewlett-Packard’s AT-41485 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41485 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω at 900 MHz, makes this device easy to use as a low noise amplifier.Features• Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz• High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz• High Gain-Bandwidth Product: 8.0 GHz Typical fT

Specifiche

Part Life Cycle Code	Transferred	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8541.21.00.75
Additional Feature	LOW NOISE, HIGH RELIABILITY	Collector Current-Max (IC)	0.06 A
Collector-Emitter Voltage-Max	12 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	30	Highest Frequency Band	C BAND
JESD-30 Code	O-PRDB-F4	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	4
Operating Temperature-Max	150 °C	Polarity/Channel Type	NPN
Power Dissipation Ambient-Max	0.5 W	Power Dissipation-Max (Abs)	0.5 W
Power Gain-Min (Gp)	17.5 dB	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	FLAT	Terminal Position	RADIAL
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	8000 MHz

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..