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AS4C256M16D3-12BCN +BOM

DDR3 4G DRAM Module

Produttore:

Alliance Memory
ProduttorePart #:

AS4C256M16D3-12BCN
Scheda dati:

AS4C256M16D3-12BCN Scheda dati (PDF)
Type:

SDRAM - DDR3
Mounting Style:

SMD/SMT
Data Bus Width:

16 bit
Organization:

256 M x 16
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per AS4C256M16D3-12BCN

E-mail: [email protected]

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tel: +852 95804164

AS4C256M16D3-12BCN Descrizione generale

The AS4C256M16D3-12BCN is a cutting-edge DDR3 SDRAM chip, boasting a whopping 4Gb capacity with a memory configuration of 256Mx16. Its impressive 1200MHz operating speed sets it apart from other memory chips on the market, ensuring high performance and efficiency in a wide range of applications. Whether you're using it in a computing, networking, or industrial setting, this chip delivers fast and reliable memory access for all your needs

Caratteristiche principali

Organization: 262,144 words × 16 bits
High speed
- 30/35/50 ns RAS access time
- 16/18/25 ns column address access time
- 7/10/10/10 ns CAS access time
Low power consumption
- Active: 500 mW max (AS4C256K16E0-25)
- Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25)
EDO page mode
Refresh
- 512 refresh cycles, 8 ms refresh interval
- RAS-only or CAS-before-RAS refresh or self-refresh
- Self-refresh option is available for new generation device only. Contact Alliance for more information.
Read-modify-write
TTL-compatible, three-state I/O
JEDEC standard packages
- 400 mil, 40-pin SOJ
- 400 mil, 40/44-pin TSOP II
5V power supply
Latch-up current> 200 mA

Specifiche

Product Category	DRAM	Type	SDRAM - DDR3
Mounting Style	SMD/SMT	Data Bus Width	16 bit
Organization	256 M x 16	Memory Size	4 Gbit
Maximum Clock Frequency	800 MHz	Access Time	20 ns
Supply Voltage - Max	1.575 V	Supply Voltage - Min	1.283 V
Supply Current - Max	110 mA	Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 95 C	Series	AS4C256M16D3
Moisture Sensitive	Yes	Product Type	DRAM
Factory Pack Quantity	190	Subcategory	Memory & Data Storage
Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.36
Access Mode	MULTI BANK PAGE BURST	Additional Feature	AUTO/SELF REFRESH
JESD-30 Code	R-PBGA-B96	Length	13 mm
Memory Density	4294967296 bit	Memory IC Type	DDR DRAM
Memory Width	16	Number of Functions	1
Number of Ports	1	Number of Terminals	96
Number of Words	268435456 words	Number of Words Code	256000000
Operating Mode	SYNCHRONOUS	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Seated Height-Max	1.2 mm	Self Refresh	YES
Supply Voltage-Max (Vsup)	1.575 V	Supply Voltage-Min (Vsup)	1.425 V
Supply Voltage-Nom (Vsup)	1.5 V	Surface Mount	YES
Technology	CMOS	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Width	9 mm

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