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1EDI20N12AFXUMA1 +BOM

Gate Driver Magnetic Coupling 1 Channel PG-DSO-8-51

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

1EDI20N12AFXUMA1
Scheda dati:

1EDI20N12AFXUMA1 Scheda dati (PDF)
Series:

EiceDriver™
Technology:

Magnetic Coupling
Number Of Channels:

1
Rise / Fall Time (Typ):

10ns, 9ns
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per 1EDI20N12AFXUMA1

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

1EDI20N12AFXUMA1 Descrizione generale

As a testament to its reliability and efficiency, the 1EDI20N12AFXUMA1 features a high level of integration, incorporating essential elements such as an integrated bootstrap diode, built-in overcurrent protection, and under voltage lockout functionality. These key features not only simplify the design process for power systems but also enhance safety and longevity. Housed in a compact and thermally enhanced package, this gate driver IC delivers exceptional thermal performance, crucial for maintaining peak efficiency in high-power applications. Compliant with stringent automotive industry standards, the 1EDI20N12AFXUMA1 is a dependable choice for automotive powertrain applications

Infineon Technologies Corporation inventario

Caratteristiche principali

EiceDRIVER Compact single channel isolated gate driver family
For 600 V, 650 V, 950 V MOSFETs
Galvanically isolated coreless transformer gate driver
4 A typical sinking and sourcing peak output current
40 V absolute maximum output supply voltage
120 ns propagation delay with 40 ns input filter
High common-mode transient immunity CMTI >100 kV/μs
Separate source and sink outputs
Short-circuit clamping and active shutdown
DSO-8 150 mil narrow-body package with 4 mm creepage distance
8 V/10 V undervoltage lockout (UVLO) protection with hysteresis
Tailored for all 650 V CoolMOS C7, P6 and other super junction MOS transistors
High switching frequency applications as SMPS, up to 4 MHz
Integrated filters reduce the need of external filters
Suitable for operation at high ambient temperature and in fast switching applications
No need to adapt signal voltage levels between μController and driver
Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
Short-circuit clamping to limit the gate voltage during short circuit

Infineon Technologies Corporation Stock originale

Applicazione

Durable UPS solutions
Smart charging systems
High-performance energy systems

Specifiche

Category	IsolatorsIsolators - Gate Drivers	Series	EiceDriver™
Technology	Magnetic Coupling	Number of Channels	1
Propagation Delay tpLH / tpHL (Max)	-	Pulse Width Distortion (Max)	-
Rise / Fall Time (Typ)	10ns, 9ns	Current - Peak Output	-
Voltage - Forward (Vf) (Typ)	-	Voltage - Output Supply	10V ~ 35V
Operating Temperature	-40°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	1EDI20	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	Gate Drivers	Product	MOSFET Gate Drivers
Type	High-Side	Mounting Style	SMD/SMT
Number of Drivers	1 Driver	Number of Outputs	1 Output
Output Current	2 A	Supply Voltage - Min	3 V
Supply Voltage - Max	15 V	Configuration	Inverting, Non-Inverting
Rise Time	10 ns	Fall Time	9 ns
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 150 C
Height	1.75 mm	Length	4.9 mm
Logic Type	CMOS	Moisture Sensitive	Yes
Pd - Power Dissipation	400 mW	Product Type	Gate Drivers
Propagation Delay - Max	143 ns	Shutdown	Shutdown
Factory Pack Quantity	2500	Subcategory	PMIC - Power Management ICs
Tradename	EiceDRIVER	Width	3.9 mm
Part # Aliases	1EDI20N12AF SP001222658	Unit Weight	0.057144 oz

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