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Vedi Specifiche Tecniche

SST39VF040-70-4C-WHE +BOM

4Mb 2.7-3.6V Parallel Flash.

Produttore:

Microchip Technology, Inc
ProduttorePart #:

SST39VF040-70-4C-WHE
Scheda dati:

SST39VF040-70-4C-WHE Scheda dati (PDF)
Mounting Style:

SMD/SMT
Series:

SST39VF
Memory Size:

4 Mbit
Interface Type:

Parallel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per SST39VF040-70-4C-WHE

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

SST39VF040-70-4C-WHE Descrizione generale

The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.

Caratteristiche principali

Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/040– 2.7-3.6V for SST39VF512/010/020/040
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)
Sector-Erase Capability– Uniform 4 KByte sectors
Fast Read Access Time:– 45 ns for SST39LF512/010/020/040– 55 ns for SST39LF020/040– 70 ns for SST39VF512/010/020/040
Latched Address and Data
Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:1 second (typical) for SST39LF/VF5122 seconds (typical) for SST39LF/VF0104 seconds (typical) for SST39LF/VF0208 seconds (typical) for SST39LF/VF040
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
CMOS I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and command sets
Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
All devices are RoHS compliant

Specifiche

Product Category:	NOR Flash	Mounting Style:	SMD/SMT
Series:	SST39VF	Memory Size:	4 Mbit
Interface Type:	Parallel	Organization:	512 k x 8
Timing Type:	Asynchronous	Data Bus Width:	8 bit
Supply Voltage - Min:	2.7 V	Supply Voltage - Max:	3.6 V
Supply Current - Max:	20 mA	Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 70 C	Packaging:	Tray
Height:	1.05 (Max) mm	Length:	8.1 (Max) mm
Memory Type:	NOR	Speed:	70 ns
Type:	No Boot Block	Width:	12.5 (Max) mm
Architecture:	Sectored	Moisture Sensitive:	Yes
Product Type:	NOR Flash	Programming Voltage:	2.7 V to 3.6 V
Standard:	Not Supported	Factory Pack Quantity:	208
Subcategory:	Memory & Data Storage	Unit Weight:	0.008808 oz
Tags	SST39VF040-70-4C-WHE, SST39VF040-70-4C-WH, SST39VF040-70-4C-W, SST39VF040-70-4C, SST39VF040-7, SST39VF04, SST39VF0, SST39VF, SST39V, SST39, SST3, SST	Product Category	NOR Flash
Mounting Style	SMD/SMT	Series	SST39VF
Memory Size	4 Mbit	Supply Voltage - Min	2.7 V
Supply Voltage - Max	3.6 V	Active Read Current - Max	20 mA
Interface Type	Parallel	Organization	512 k x 8
Data Bus Width	8 bit	Timing Type	Asynchronous
Minimum Operating Temperature	0 C	Maximum Operating Temperature	+ 70 C
Architecture	Sectored	Height	1.05 (Max) mm
Length	8.1 (Max) mm	Memory Type	NOR
Moisture Sensitive	Yes	Product Type	NOR Flash
Programming Voltage	2.7 V to 3.6 V	Speed	70 ns
Standard	Not Supported	Factory Pack Quantity	208
Subcategory	Memory & Data Storage	Type	No Boot Block
Width	12.5 (Max) mm	Unit Weight	0.008808 oz

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