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71V65903S80PFG +BOM

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8 ns 100-TQFP (14x14)

Produttore:

Renesas Technology Corp
ProduttorePart #:

71V65903S80PFG
Scheda dati:

71V65903S80PFG Scheda dati (PDF)
Pin Count:

100
Released Date:

Feb 12, 2020
Last Modified Date:

Aug 1, 2023 1:45 PM UTC
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per 71V65903S80PFG

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

71V65903S80PFG Descrizione generale

Step into the future with the advanced 71V65903S80PFG 3.3V CMOS SRAM, engineered to revolutionize bus efficiency with its innovative Zero Bus Turnaround feature. This cutting-edge memory device, organized as 512K x 18, ensures smooth and uninterrupted data transfers by eliminating dead bus cycles during read and write transitions. Equipped with address, data-in, and control signal registers, the 71V65903S80PFG simplifies system integration and enhances data handling capabilities. With burst mode support for rapid access to multiple data cycles, this SRAM sets a new standard for high-speed and reliable memory performance in a variety of applications

Caratteristiche principali

High performance system speed - 100 MHz
(7.5 ns Clock-to-Data Access)
ZBTTM Feature - No dead cycles between write and read
cycles
Internally synchronized output buffer enable eliminates the need to control OE
Single R/W (READ/WRITE) control pin
4-word burst capability (Interleaved or linear)
Individual byte write (BW1 - BW4) control (May tie active)
Three chip enables for simple depth expansion
3.3V power supply (±5%)
3.3V (±5%) I/O Supply (VDDQ)
Power down controlled by ZZ input
Available in 100-pin TQFP, 119-pin BGA and 165 fpBGA packages

Specifiche

Pin Count	100	Released Date	Feb 12, 2020
Last Modified Date	Aug 1, 2023 1:45 PM UTC

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