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DMN67D7L-7 +BOM

High-voltage MOSFET with BVDSS ratings from 41V to 60V

Produttore:

DIODES
ProduttorePart #:

DMN67D7L-7
Scheda dati:

DMN67D7L-7 Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

104 Weeks
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per DMN67D7L-7

DMN67D7L-7 Descrizione generale

This FET comes in a compact DFN package, allowing for high power density designs, making it ideal for space-constrained applications. Moreover, it features a maximum junction temperature of 175°C and low thermal resistance, ensuring proper heat dissipation and contributing to its overall longevity and performance in demanding operating conditions. Whether it's in high-current switching circuits or power supplies, the DMN67D7L-7 FET delivers low on-resistance and high efficiency, meeting the essential requirements for power management applications

Applicazione

SWITCHING

Specifiche

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	104 Weeks
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	0.21 A	Drain-source On Resistance-Max	5 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.57 W
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	210 mA	Rds On - Drain-Source Resistance	1.5 Ohms
Vgs - Gate-Source Voltage	- 40 V, + 40 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	821 pC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	570 mW
Channel Mode	Enhancement	Fall Time	5.6 ns
Product Type	MOSFET	Rise Time	3 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	7.6 ns
Typical Turn-On Delay Time	2.8 ns	Unit Weight	0.000282 oz
Package/Case	SOT23-3

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