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BF998E6327HTSA1 +BOM

BF998E6327HTSA1 SOT-143 null MOSFETs ROHS

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

BF998E6327HTSA1
Scheda dati:

BF998E6327HTSA1 Scheda dati (PDF)
Serie: BF998
Technology:

MOSFET
Configuration:

N-Channel
Frequency:

45MHz
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per BF998E6327HTSA1

BF998E6327HTSA1 Information

Description

The BF998E6327HTSA1 is a RF MOSFET transistor from Infineon Technologies, designed for low noise amplifiers and radio frequency applications. It features a N-channel design with a drain-source voltage of 12V and gate-source voltage of 30V, capable of handling up to 30mA of current. This device offers a low noise figure, making it suitable for high-frequency applications such as satellite communication systems, wireless communication devices, and electronic test equipment. Its compact SOT-143 package makes it ideal for portable devices and space-constrained designs. The BF998E6327HTSA1 is also suitable for biomedical signal processing and other low-voltage, low-power applications where a high level of noise immunity is required. Overall, this transistor provides a reliable and efficient solution for RF amplification and transmission in various industries.

Features

Based on the provided information, the features of the BF998E6327HTSA1 are:

Package: SOT-143
Transistor Type: N-Channel
Drain-Source Voltage: 12 V
Gate-Source Voltage: 30 V
Drain Current: 30 mA
Low noise figure

These features make it suitable for applications such as low noise amplifiers, radio frequency amplifiers, single-ended RF applications, high-frequency applications, and more.

Package

The package type for BF998E6327HTSA1 is SOT-143.

Pinout

The BF998E6327HTSA1 is a RF MOSFET transistor with a package type of SOT-143. The pin count is 3:

Drain (D)
Gate (G)
Source (S)

This transistor is designed for low noise amplifiers, radio frequency amplifiers, and other high-frequency applications. It has a drain-source voltage rating of 12V and a gate-source voltage rating of 30V, with a maximum drain current of 30mA.

Manufacturer

The manufacturer of the BF998E6327HTSA1 is Infineon Technologies, a German-based semiconductor manufacturer that specializes in microelectronics and power management solutions.

Applications

According to the product information, the application areas of BF998E6327HTSA1 are:

Low noise amplifiers
Radio frequency amplifiers
Single ended RF applications
High frequency applications
Low-voltage, low-power applications
Biomedical signal processing
Wireless communication systems
Portable communication devices
Electronic test equipment
Satellite communication systems

Specifiche

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs	Technology	MOSFET
Configuration	N-Channel	Frequency	45MHz
Gain	28dB	Voltage - Test	8 V
Current Rating (Amps)	30mA	Noise Figure	2.8dB
Current - Test	10 mA	Power - Output	-
Voltage - Rated	12 V	Mounting Type	Surface Mount
Base Product Number	BF998	RHoS	yes
PBFree	yes	HalogenFree	no
Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Id - Continuous Drain Current	30 mA	Vds - Drain-Source Breakdown Voltage	12 V
Rds On - Drain-Source Resistance	-	Operating Frequency	1 GHz
Output Power	-	Minimum Operating Temperature	-
Maximum Operating Temperature	+ 150 C	Mounting Style	SMD/SMT
Product Type	RF MOSFET Transistors	Factory Pack Quantity	3000
Subcategory	MOSFETs	Type	RF Small Signal MOSFET
Part # Aliases	BF 998 E6327 SP000010978	Unit Weight	0.000353 oz
Package/Case	SOT-143

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